2003. 3. 25 1/3 semiconductor technical data ktc9018s epitaxial planar npn transistor revision no : 1 high frequency low noise amplifier application. vhf band amplifier application. features h small reverse transfer capacitance : c re =0.65pf(typ.). h low noise figure : nf=2.2db(typ.) at f=100mhz. h high transition frequency : f t =800mhz(typ.). maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) note : h fe classification f:54 q 80, g:72 q 108, h:97 q 146, i:130 q 198 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =1ma 54 - 198 reverse transfer capacitance c re v ce =6v, f=1mhz, i e =0 - - 1.0 pf transition frequency f t v ce =10v, i c =8ma, f=100mhz 500 800 - mhz collector-base time constant c c h rbb? v ce =6v, i e =-1ma, f=30mhz - - 30 ps noise figure nf v ce =6v, i e =-1ma, f=100mhz - - 4.0 db power gain g pe 15 - - characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 20 ma emitter current i e -20 ma collector power dissipation p c * 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? * p c : package mounted on 99.5% alumina (10 ? 8 ? 0.6 x ) h rank type name marking lot no. bg fe
2003. 3. 25 2/3 ktc9018s revision no : 1 1 -10 -3 -0.5 -0.2 -1 emitter common v =6v f=100mhz ta=25 c ce -5 3 5 10 30 emitter common v =6v f=100mhz ta=25 c ce v =6v ce v =6v ce g oe g c oe c ie ie common emitter v =6v ta=25 c ce input capacitance c (pf) ie input conductance g (m ) ie 4 collector current 0 c 400 600 base current b static characteristics dc current gain h fe collector current i (ma) c h - i 8 12 16 20 200 0 10 20 40 30 0.8 0.6 0.4 0.2 i (ma) voltage v (v) base-emitter be i ( a) voltage v (v) collector-emitter ce i =50 a b 100 150 200 250 300 350 400 450 500 0 common emitter ta=25 c fe c emitter current i (ma) e e ie ie c , g - i ? common emitter v =6v f=100mhz ta=25 c ce y fe fe emitter current i (ma) e e fe fe y , - i phase angle of forward transfer admittance ( ) fe y (m ) forward transfer admitance fe emitter current i (ma) e e oe oe c , g - i oupu t capa citance c (pf) oe ouput conductance g ( ) oe 10 30 50 100 300 0.1 0.3 0.5 3 10 1520 -0.2 5 30 ? 50 10 100 300 0.5 3 5 1 10 30 -0.3 -1 -5 -3 -10 -0.2 5 30 50 10 100 -5 -30 -50 -10 -100 -0.5 -1 -5 -3 -10 ?
2003. 3. 25 3/3 ktc9018s revision no : 1 y - f re re reverse transfer conductance g ( ) -200 -800 b ( ) re reverse transfer susceptance -160 -120 -80 -40 0 -600 -400 -200 0 0 0 input susceptance b (m ) ie input conductance g (m ) ie 51015202530 4 8 12 16 20 common emitter v =6v ta=25 c ce e i =-1ma f=200mhz 150 100 50 27 10.7 27 50 100 150 200 f=10.7mhz e common emitter v =6v i =-1ma ta=25 c ce 0 -10 -20 -30 50 40 30 20 10 forward transfer susceptance fe b (m ) -40 0 forward transfer conductance g (m ) ? ? ? ? ? ? ? ? fe y - f ie y - f fe 10.7 27 50 100 150 f=200mhz i =-1ma e ce ta=25 c v =6v common emitter 2000 1600 1200 800 400 120 100 80 60 40 20 oe output conductance g ( ) oe output susceptance b ( ) 0 0 y - f oe i =-1ma e ce ta=25 c v =6v common emitter 200 150 27 100 50 f=10.7mhz collector power dissipation pc (mw) 0 0 ambient temperature ta ( c ) pc - ta 25 50 75 100 125 150 175 100 200 300 400 500 mounted on 99.5% alumina 10 x 8 x 0.6mm ta=25 c 1 2 1 2
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